Channelized filter using semiconductor fabrication

A semiconductor technology implemented high-frequency channelized filter comprising:

• a substantially planar dielectric substrate;
• lithographically fabricated metal traces disposed on one of two major surfaces of the substrate;
• an input and output port disposed on the substrate;
• one of the metal traces carrying a high-frequency signal to be filtered between the input and output port;
• a plurality of other of the metal traces connected to the one metal trace at intervals along the length of the one metal trace, the plurality of other metal traces each providing a reactance to the one metal trace where the reactance varies with frequency;
• additional traces of the metal traces serving as a reference ground for the one metal trace and the other metal traces;
• a micro-machined silicon enclosure mounted to the substrate with a first planar surface and semiconductor fabricated cavities in the enclosure that extend through the first surface, internal walls within the silicon enclosure defining the cavities;
• a layer of conductive metal deposited to cover all of the first planar surface, cavities and internal walls prior to the mounting of the silicon enclosure to the substrate;
• the silicon enclosure having substantially continuous areas of the first planar surface about the periphery of the silicon enclosure that are dimensioned to engage corresponding areas of the additional traces about the periphery of the substrate;
• each of the other metal traces having a corresponding separated cavity dimensioned with associated cavity walls that engage additional traces adjacent the respective other metal trace to individually surround each of the other metal traces with a conductive metal thereby providing electromagnetic field isolation for each other metal trace;
• metal-to-metal conductive bonds formed between first planar surfaces that engage the additional traces to establish a common reference ground.