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US 2022/0020705 A1Published application
Semiconductor wafer thinned by stealth lasing
AssigneeWestern Digital Technologies, Inc.
InventorsChee Keong Loh, Foo You Chow, Ridzuan Hanapi, Boon Soo Lim
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Abstract
A semiconductor wafer thinned by a stealth lasing process, and semiconductor dies formed therefrom. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by focusing a laser at discrete points in the wafer substrate beneath the surface of the wafer. Upon completion of stealth lasing in one or more planar layers in the substrate, a portion of the substrate may be removed, leaving the wafer thinned to a desired final thickness.
Claims20
A semiconductor die, comprising:
- a first major surface;
- a plurality of integrated circuits formed in the first major surface of the wafer;
- a lased, second major surface opposed to the first major surface;
- and
- a die attach film (DAF) layer covering the lased, second major surface.
2 more elements
A semiconductor wafer, comprising:
- a first major surface;
- a plurality of semiconductor dies, the plurality of semiconductor dies comprising integrated circuits formed in the first major surface of the wafer;
- and
- a lased, second major surface opposed to the first major surface.
1 more element
A semiconductor wafer, comprising:
- a first major surface;
- a plurality of semiconductor dies, the plurality of semiconductor dies comprising integrated circuits formed in the first major surface of the wafer;
- a second major surface opposed to the first major surface;
- wherein the second major surface is defined by means for severing a first portion of the wafer from a second portion of the wafer.
1 more element
Dependencies are inferred from the claim text.