Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsHae Chan PARK, Jang Won KIM, Jae Taek KIM
Life of this patent
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Abstract
The present technology relates to a semiconductor device and a method of manufacturing the same. The semiconductor device includes a first stack including first interlayer insulating layers and first conductive patterns which are alternately stacked with one another, a second stack including second interlayer insulating layers and second conductive patterns which are alternately stacked with one another on the first stack, a plurality of channel plugs vertically formed through the first stack and the second stack, and at least one dummy plug vertically formed through the second without passing through the first stack.
Claims12
A semiconductor device comprising:
- a first stack including first interlayer insulating layers and first conductive patterns which are alternately stacked with one another;
- a second stack including second interlayer insulating layers and second conductive patterns which are alternately stacked with one another on the first stack;
- a plurality of channel plugs at least partially passing through the first stack and the second stack and extending in a vertical direction;
- at least one dummy plug at least partially passing through the second stack without passing through the first stack;
- and
- first and second slits at least partially passing through the first stack and the second stack,
- wherein the at least one dummy plug is disposed in a region adjacent to the first and second slits.
A semiconductor device comprising:
- a first stack including first interlayer insulating layers and first conductive patterns which are alternately stacked with one another;
- a second stack including second interlayer insulating layers and second conductive patterns which are alternately stacked with one another on the first stack;
- a plurality of channel plugs at least partially passing through the portion or the entirety of the first stack and the second stack and extending in a vertical direction;
- at least one dummy plug at least partially passing through the second stack without passing through the first stack;
- and
- first and second slits at least partially passing through the portion or the entirety of the first stack and the second stack,
- wherein the plurality of channel plugs and the at least one dummy plug include same material layers.
Dependencies are inferred from the claim text.