Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkio SUZUKI, Atsushi MIYAGUCHI, Shunpei YAMAZAKI
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Abstract
A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.
Claims10
A semiconductor device comprising:
- a silicon substrate;
- and
- a device provided above the silicon substrate,
- wherein the device comprises a transistor and a conductor,
- wherein the transistor comprises a metal oxide in a channel formation region, wherein conductivity is imparted to the silicon substrate, and
- wherein the conductor is electrically connected to each of a drain of the transistor and the silicon substrate through openings provided in the device.
A semiconductor device comprising:
- a silicon substrate;
- a device provided above the silicon substrate;
- a first extraction electrode;
- and
- a second extraction electrode,
- wherein the device comprises a transistor and a conductor,
- wherein the transistor comprises a metal oxide in a channel formation region,
- wherein conductivity is imparted to the silicon substrate,
- wherein the conductor is electrically connected to each of a drain of the transistor and the silicon substrate through openings provided in the device,
- wherein the first extraction electrode is electrically connected to the conductor connected to a source of the transistor, and
- wherein the second extraction electrode is electrically connected to the silicon substrate.
Dependencies are inferred from the claim text.