Semiconductor device and a method of manufacture

A method of producing a semiconductor device, the method comprising the steps of:

• providing a substrate;
• creating a pocket with a first sidewall of about 45 degrees and a second sidewall of about 45 degrees on a opposite side with respect to the first sidewall;
• providing a first solder or glue re-distribution layer part on the first sidewall and providing a second solder or glue re-distribution layer part on the second sidewall;
• providing a die, wherein the die comprises a collector contact, a base contact and an emitter contact,
• wherein the base contact and emitter contact are oriented downwards, facing a bottom of the semiconductor device,
• wherein the collector contact is oriented upwards, facing a top of the semiconductor device,
• providing an isolation material that is isolating the first re-distribution layer part from the second re-distribution layer part,
• wherein the emitter contact is connected to the first re-distribution layer part and the base contact is connected to the second re-distribution layer part, so that the emitter contact via the first re-distribution layer part, the base contact via the second re-distribution layer part, and the collector contact are fan out to the top surface of the semiconductor device.

A method of producing a semiconductor device, the method comprising the steps of:

• providing a substrate;
• creating a pocket with a first sidewall of about 45 degrees and a second sidewall of about 45 degrees on a opposite side with respect to the first sidewall;
• providing a first solder or glue re-distribution layer part on the first sidewall;
• providing a die, wherein the die comprises a collector contact, a base contact and an emitter contact,
• wherein the base contact and emitter contact are oriented upwards, facing a top of the semiconductor device,
• wherein the collector contact is oriented downwards, facing a bottom of the semiconductor device,
• providing an isolation material between the die and the pocket,
• wherein the collector contact is connected to the first re-distribution layer part, so that the emitter contact, the base contact, and the collector contact via the first re-distribution layer part are fan out to the top surface of the semiconductor device.

A method of producing a semiconductor device, the method comprising the steps of:

• providing a substrate;
• creating a pocket with a first sidewall of about 45 degrees and a second sidewall of about 45 degrees on a opposite side with respect to the first sidewall;
• providing a first solder or glue re-distribution layer part on the first sidewall and providing a second solder or glue re-distribution layer part on the second sidewall,
• wherein the second re-distribution layer part comprises a third re-distribution layer part and a fourth re-distribution layer part,
• providing a die, wherein the die comprises a collector contact, a base contact and an emitter contact, wherein the die is arranged on a side with respect to the semiconductor device;
• and
• providing an isolation material that is isolating the first re-distribution layer part, the third re-distribution layer part and the fourth re-distribution layer part from each other,
• wherein the collector contact is connected to the first re-distribution layer part, the emitter contact is connected to the third re-distribution layer part, and the base contact is connected to the fourth re-distribution layer part, so that the collector contact via the first re-distribution layer part, the collector contact via the third re-distribution layer part, and the base contact via the fourth re-distribution layer part are fan out to a top surface of the semiconductor device.