Multi-Liner TSV Structure and Method Forming Same

A structure comprising:

• a semiconductor substrate;
• a first conductive feature on a first side of the semiconductor substrate;
• a second conductive feature on a second side of the semiconductor substrate;
• a through-via penetrating through the semiconductor substrate, wherein the through-via electrically interconnects the first conductive feature and the second conductive feature;
• a first dielectric liner encircling the through-via;
• and
• a second dielectric liner encircling the first dielectric liner, wherein the first dielectric liner and the second dielectric liner are formed of different materials, and the second dielectric liner has better moisture isolation ability than the first dielectric liner.

A structure comprising:

• a die comprising:
• a semiconductor substrate;
• a plurality of low-k dielectric layers over the semiconductor substrate;
• a non-low-k passivation layer over the plurality of low-k dielectric layers;
• a through-via penetrating through the semiconductor substrate, the plurality of low-k dielectric layers, and the non-low-k passivation layer;
• a multi-layer dielectric liner encircling the through-via;
• a first electrical connector over the non-low-k passivation layer and at a top surface of the die;
• and
• a second electrical connector underlying the semiconductor substrate and at a bottom surface of the die, wherein the first electrical connector and the second electrical connector are electrically interconnected through the through-via.