US 2022/0020671 A1 · FLIP-STACK TYPE SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

Abstract

The present invention minimizes parasitic inductance at the time of packaging a semiconductor that requires high efficiency and high-speed switching driving. In implementing a semiconductor package composed of one or more switching devices and one or more diode devices, the present invention provides a flip-stack structure in which a switching device is mounted on an insulating substrate or a metal frame, a flat metal is bonded onto the switching device, and a diode device is flipped and stacked on the flat metal, and accordingly, the flat metal with a large area is used for connection between the devices and between the devices and the insulating substrate, thereby minimizing parasitic inductance generated at a time of semiconductor packaging and automating the entire process of the semiconductor packaging.

Claims13

Dependent claims

A flip-stack type semiconductor package, comprising:

an insulating substrate;
one or more switching devices mounted on the insulating substrate;
a first flat metal positioned on a top surface of the switching device;
and
one or more diode devices flip-stacked on the first flat metal.

2 more elements

A method of manufacturing a flip-stack type semiconductor package, the method comprising:

forming a switching device soldering region and a first flat metal soldering region on an insulating substrate;
applying solder to the switching device soldering region and the first flat metal soldering region, and mounting one or more switching devices in the switching device soldering region;
applying solder to a first electrode on a top surface of the switching device and mounting a first flat metal in the first flat metal soldering region on which the solder is applied and which is formed on the insulating substrate;
applying solder to a first flat metal region to which a diode device is bonded, and flipping and mounting the diode device so that the diode device is in contact with the first flat metal region on which the solder is applied;
and
soldering and bonding the switching device, the diode device, the first flat metal, and the insulating substrate at the same time.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/380,583Filed 20 Jul 2021

Priority

KR 10-2020-008983020 Jul 2020

Published

20 Jan 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification24 codes

H10W 40/255
Characterised by their materials: having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
H10W 70/481
Leadframes: for devices being provided for in groups H10D8/00 - H10D48/00
H10W 44/501
Electrical arrangements for controlling or matching impedance: inductive arrangements
H10W 70/466
Additional interconnections in combination with leadframes: tape carriers or flat leads

Flip-stack type semiconductor package and method of manufacturing the same

Life of this patent

Flip-stack type semiconductor package and method of manufacturing the same

Life of this patent

Abstract

Claims13