Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate comprising:
• a first semiconductor region having a first conductive type;
• and
• a second semiconductor region having a second conductive type opposite to the first conductive type;
• a buried insulating film formed on a main surface of the semiconductor substrate such that the buried insulating film surrounds the second semiconductor region in plan view;
• a first conductive film formed on the semiconductor substrate such that the first conductive film directly contacts with the first semiconductor region and the second semiconductor region;
• an insulating layer formed on the semiconductor substrate such that the insulating layer covers the first conductive film;
• a first contact formed in the insulating layer such that the first contact overlaps with the second semiconductor region in plan view and reaches the first conductive film;
• and
• a second contact formed in the insulating layer such that the second contact overlaps with the second semiconductor region in plan view and reaches the first conductive film,
• wherein the second semiconductor region has a first side and a second side opposite to the first side,
• wherein, in plan view, the first contact is adjacent to the second contact along the first side of the second semiconductor region,
• wherein, in a direction along the first side, a first distance between the second semiconductor region and the buried insulating film is greater than a second distance between the first contact and the second contact,
• wherein the first conductive film and the first semiconductor region form a Schottky barrier diode while the second semiconductor region does not constitute the Schottky barrier diode.