Power semiconductor module and manufacturing method for power semiconductor module
AssigneesNgk Electronics Devices, Inc., NGK Insulators, Ltd.
InventorsYuhji UMEDA, Yoshio TSUKIYAMA, Haruhiko ITO
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AssigneesNgk Electronics Devices, Inc., NGK Insulators, Ltd.
InventorsYuhji UMEDA, Yoshio TSUKIYAMA, Haruhiko ITO
Estimating the term…
A frame is made of a first material. An external terminal electrode is attached to the frame. A heat sink plate supports the frame and includes a mounting region in the frame. The heat sink plate is made of a non-composite material containing copper with purity of 95.0 weight percentage or more. A first adhesive layer bonds the frame and the heat sink plate to each other. The first adhesive layer is made of a second material different from the first material, and has a first composition. A power semiconductor element is mounted on the mounting region of the heat sink plate. A cover is attached to the frame to constitute a sealing space sealing the power semiconductor element without gross leak. A second adhesive layer bonds the frame and the cover to each other, and has a second composition different from the first composition of the first adhesive layer.
A power semiconductor module comprising:
A manufacturing method for a power semiconductor module, comprising:
Dependencies are inferred from the claim text.