Void free low stress fill
AssigneeLam Research Corporation
InventorsAnand Chandrashekar, Tsung-Han Yang
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Abstract
Provided herein are methods of depositing low stress and void free metal films in deep features and related apparatus. Embodiments of the methods include treating the sidewalls of the holes to inhibit metal deposition while leaving the feature bottom untreated. In subsequent deposition operations, metal precursor molecules diffuse to the feature bottom for deposition. The process is repeated with subsequent inhibition operations treating the remaining exposed sidewalls. By repeating inhibition and deposition operations, high quality void free fill can be achieved. This allows high temperature, low stress deposition to be performed.
Claims20
A method comprising:
- providing a 3-D structure on a substrate, the 3-D structure comprising metal lines arranged in a staircase pattern, a dielectric material overlying the staircase pattern, and a vertically-oriented feature having feature sidewalls and a feature bottom and providing fluidic access to a metal line at the feature bottom;
- depositing a conformal layer of metal in the vertically-oriented feature;
- exposing the conformal layer of metal to inhibition species at a first flow rate and a first exposure time in a first inhibition operation;
- after the first inhibition operation, preferentially depositing metal at the bottom of the vertically-oriented feature in a first non-conformal deposition operation, wherein a temperature of the substrate is at least 400° C. during the first non-conformal deposition operation;
- after the first non-conformal deposition operation, exposing the vertically-oriented feature to inhibition species at a second flow rate and a second exposure time in a second inhibition operation, wherein the second flow rate is lower than the first flow rate and/or the second exposure time is lower than the first exposure time;
- and after the second inhibition operation, depositing metal in the feature at a substrate temperature of at least 400° C. in a second non-conformal deposition operation.
An apparatus for processing substrates, the apparatus comprising:
- (a) a process chamber comprising at least one station having a pedestal configured to hold a substrate;
- (b) at least one outlet for coupling to a vacuum;
- (c) one or more process gas inlets coupled to one or more process gas sources;
- and
- (d) a controller for controlling operations in the apparatus, comprising machine-readable instructions for:
- inletting inhibition species at first flow rate and first exposure time to the process chamber in a first inhibition operation;
- after the first inhibition operation, inletting a metal precursor and reducing agent to deposit a metal, wherein a temperature of the pedestal on which the substrate is at least 400° C., in a first non-conformal deposition operation;
- after the first non-conformal deposition operation, inletting inhibition species to the process chamber at a second flow rate and second exposure time in a second inhibition operation, wherein the second flow rate is lower than the first flow rate and/or the second exposure time is lower than the first exposure time;
- and
- after the second inhibition operation, inletting a metal precursor and reducing agent to deposit a metal, wherein a temperature of the pedestal on which the substrate is at least 400° C., in a second non-conformal deposition operation.
A method comprising:
- depositing a conformal layer of metal in a feature on a substrate;
- treating a portion of the conformal layer of metal to inhibit subsequent tungsten nucleation;
- after treating the portion of the conformal layer, preferentially depositing tungsten at the bottom of the feature, wherein a temperature of the substrate is at least 400° C. during the deposition;
- and
- repeating the treating and depositing operations one or more times to fill the feature with metal.
Dependencies are inferred from the claim text.