Interconnection element and method of manufacturing the same
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorMagali GREGOIRE
Life of this patent
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Abstract
An interconnection element of an interconnection structure of an integrated circuit is manufactures by a method where a cavity is etched in an insulating layer. A silicon nitride layer is then deposited on walls and a bottom of the cavity. The nitrogen atom concentration in the silicon nitride layer increasing as a distance from an exposed surface of the silicon nitride layer increases. A copper layer is deposited on the silicon nitride layer. The cavity is further filled with copper. A heating process is performed after the deposition of the copper layer, to convert the copper layer and the silicon nitride layer to form a copper silicide layer which has a nitrogen atom concentration gradient corresponding to the gradient of the silicon nitride layer.
Claims15
An integrated circuit, comprising:
- an interconnection structure resting on a semiconductor layer, the interconnection structure comprising an interconnection element at least partly arranged in an insulating layer of said interconnection structure;
- wherein the interconnection element comprises:
- a copper fill;
- and
- a copper silicide layer positioned between the copper fill and the insulating layer of said interconnection structure at a lower surface and a lateral surface of the copper fill;
- wherein the copper silicide layer comprises nitrogen atoms, and wherein a nitrogen atom concentration in the silicide layer increases as distance away from the copper fill increases.
An integrated circuit, comprising:
- an insulating layer;
- a cavity in the insulating layer;
- an interconnection element within said cavity, wherein the interconnection element comprises:
- a copper silicide layer lining side walls and a bottom of the cavity;
- and
- a copper fill in the cavity;
- wherein the copper silicide layer comprises nitrogen atoms, and wherein a nitrogen atom concentration in the silicide layer increases from the copper fill towards the insulating layer.
Dependencies are inferred from the claim text.