Interconnect Structures with Selective Barrier for BEOL Applications
AssigneeInternational Business Machines Corporation
InventorsPrasad Bhosale, Rudy J. Wojtecki, Nicholas Anthony Lanzillo, Chih-Chao Yang
Life of this patent
Estimating the term…
Abstract
Interconnect structures with selective barrier for back-end-of-line (BEOL) applications are provided. In one aspect, an interconnect structure includes: a dielectric disposed over at least one metal line; at least one feature present in the dielectric over the at least one metal line; a barrier layer lining only surfaces of the dielectric within the at least one feature; at least one interconnect present in the at least one feature over the barrier layer, wherein the at least one interconnect is in direct contact with the at least one feature. A method of forming an interconnect structure is also provided.
Claims20
An interconnect structure, comprising:
- a dielectric disposed over at least one metal line;
- at least one feature present in the dielectric over the at least one metal line;
- a barrier layer lining only surfaces of the dielectric within the at least one feature;
- and
- at least one interconnect present in the at least one feature over the barrier layer, wherein the at least one interconnect is in direct contact with the at least one metal line.
A structure, comprising:
- a dielectric disposed over at least one metal line;
- at least one feature present in the dielectric over the at least one metal line;
- a self-assembled monolayer (SAM) disposed only on the at least one metal line within the at least one feature;
- and
- a barrier layer lining only surfaces of the dielectric within the at least one feature.
A method of forming an interconnect structure, the method comprising the steps of:
- depositing a dielectric over at least one metal line;
- patterning at least one feature in the dielectric over the at least one metal line;
- selectively forming a SAM only on the at least one metal line within the at least one feature;
- curing the SAM to cross-link the SAM
- depositing a barrier layer into and lining the at least one feature, wherein the SAM suppresses deposition of the barrier layer onto the at least one metal line such that the barrier layer as-deposited is present only on surfaces of the dielectric within the at least one feature;
- removing the SAM;
- and
- depositing at least one metal into the at least one feature over the barrier layer to form at least one interconnect in the at least one feature that is in direct contact with the at least one feature.
Dependencies are inferred from the claim text.