Semiconductor device with multi-layer connecting structure and method for fabricating the same
AssigneeNanya Technology Corporation
InventorCheng-Hsiang FAN
Life of this patent
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Abstract
The present application discloses a semiconductor device with the multi-layered connecting structure and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a single-layered connecting structure positioned above the substrate, and a multi-layered connecting structure positioned above the substrate and including a plurality of first conductive layers and a plurality of second conductive layers alternatively stacked. A top surface of the multi-layered connecting structure is substantially coplanar with a top surface of the single-layered connecting structure and a width of the multi-layered connecting structure is less than a width of the single-layered connecting structure.
Claims20
(canceled)
(canceled)
A semiconductor device, comprising:
- a substrate;
- a single-layered connecting structure positioned above the substrate;
- and
- a multi-layered connecting structure positioned above the substrate and comprising a plurality of first conductive layers and a plurality of second conductive layers alternatively stacked;
- wherein a top surface of the multi-layered connecting structure is coplanar with a top surface of the single-layered connecting structure and a width of the multi-layered connecting structure is less than a width of the single-layered connecting structure;
- wherein the plurality of first conductive layers and the plurality of second conductive layers have opposite stress states.
(canceled)
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a multi-layered connecting structure above the substrate and comprising a plurality of first conductive layers alternatively formed with a plurality of second conductive layers;
- and
- forming a single-layered connecting structure above the substrate and having a top surface of the single-layered connecting structure coplanar with a top surface of the multi-layered connecting structure and a width of the single-layered connecting structure greater than a width of the multi-layered connecting structure;
- wherein the plurality of first conductive layers and the plurality of second conductive layers have opposite stress states.
Dependencies are inferred from the claim text.