Body-Source-Tied Semiconductor-On-Insulator (SOI) Transistor

2:

• The SOI transistor of claim 1, wherein said heavily-doped body-implant region is situated partially outside said source regions and near gate contacts.

3:

• The SOI transistor of claim 2, wherein at least one of said gate fingers comprises a stub adjacent to said heavily-doped body-implant region.

4:

• The SOI transistor of claim 1, wherein said heavily-doped body-implant region is situated inside said source regions and near a center of said gate fingers.

5:

• The SOI transistor of claim 4, wherein at least one of said gate fingers comprises a stub adjacent to said heavily-doped body-implant region.

6:

• The SOI transistor of claim 1, where said SOI transistor is utilized in a low noise amplifier (LNA).

7:

• The SOI transistor of claim 1, where said SOI transistor is utilized in a power amplifier (PA).

9:

• The SOI transistor of claim 8, wherein said heavily-doped body-implant region is situated partially outside said source regions and near gate contacts.

10:

• The SOI transistor of claim 9, wherein at least one of said gate fingers comprises a stub adjacent to said heavily-doped body-implant region.

11:

• The SOI transistor of claim 8, wherein said heavily-doped body-implant region is situated inside said source regions and near a center of said gate fingers,

12:

• The SOI transistor of claim 11, wherein at least one of said gate fingers comprises a stub adjacent to said heavily-doped body-implant region.

13:

• The SOI transistor of claim 8, where said SOI transistor is utilized in a low noise amplifier (LNA).

14:

• The SOI transistor of claim 8, where said SOI transistor is utilized in a power amplifier (PA).

15-20. (canceled)

22:

• The SOI transistor of claim 21, wherein said heavily-doped body-implant region is situated partially outside said source region and near a gate contact.

23:

• The SOI transistor of claim 22, wherein said gate finger comprises a stub adjacent to said heavily-doped body-implant region.

24:

• The SOI transistor of claim 21, wherein said heavily-doped body-implant region is situated inside said source region and near a center of said gate finger.

25:

• The SOI transistor of claim 24, wherein said gate finger comprises a stub adjacent to said heavily-doped body-implant region.

26:

• The SOI transistor of claim 21, where said SOI transistor is utilized in a low noise amplifier (LNA).