Formation method for air spacer layer and semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorsKang YOU, Jie BAI
Life of this patent
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Abstract
The present application relates to a formation method for an air spacer layer and a semiconductor structure. The formation method for an air spacer layer includes: forming a first structure on a substrate and forming a second structure on the substrate, the second structure being located on a side surface of the first structure, a first trench being formed between the second structure and the first structure, and the second structure being exposed in the first trench; and growing, by an epitaxial growth process, an epitaxial layer on the second structure exposed in the first trench, the epitaxial layer not filling up the first trench, and an unfilled portion of the first trench forming the air spacer layer.
Claims16
A formation method for an air spacer layer, comprising:
- forming a plurality of parallel spaced first structures on a substrate;
- forming a second structure on the substrate, the second structure being located between adjacent first structures, and a first trench being formed between the second structure and the first structure;
- and
- growing an epitaxial layer on a surface of the second structure by an epitaxial growth process, and filling part of the first trench with the epitaxial layer, an unfilled portion of the first trench forming the air spacer layer.
A semiconductor structure, comprising:
- a substrate;
- a plurality of first structures spaced on the substrate in parallel;
- a second structure formed on the substrate and located between adjacent first structures, a first trench being formed between the second structure and the first structure;
- and
- an epitaxial layer grown by the second structure and the substrate by epitaxial growth, the epitaxial layer being formed at a bottom of the first trench and a side surface of the second structure toward the first trench, and an unfilled portion of the first trench forming an air spacer layer.
Dependencies are inferred from the claim text.