Manufacturing method of semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorXifei BAO
Life of this patent
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Abstract
A manufacturing method of a semiconductor structure includes the following steps. A substrate is provided. A barrier layer is formed on the substrate. A sacrificial layer is formed on the barrier layer. An opening pattern is formed over the sacrificial layer by utilizing a photolithography process. The sacrificial layer is etched according to the opening pattern to form first trenches by using the barrier layer as an etch stop layer. A medium layer material is filled in the first trenches. The sacrificial layer is etched to form second trenches by using the barrier layer as the etch stop layer. A hard mask layer material is filled in the second trenches. The medium layer material is etched to form a hard mask layer by using the barrier layer as the etch stop layer.
Claims12
A manufacturing method of a semiconductor structure, comprising:
- providing a substrate;
- forming a barrier layer on the substrate;
- forming a sacrificial layer on the barrier layer;
- forming an opening pattern over the sacrificial layer through a photolithography process;
- etching the sacrificial layer according to the opening pattern by taking the barrier layer as an etch stop layer to form first trenches;
- filling a medium layer material in the first trenches;
- etching the sacrificial layer by taking the barrier layer as the etch stop layer to form second trenches;
- filling a hard mask layer material in the second trenches;
- and
- etching the medium layer material by taking the barrier layer as the etch stop layer to form a hard mask layer.
Dependencies are inferred from the claim text.