# US 2022/0020601 A1 · Etching method and etching apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2022/0020601 A1 - Document ID: US20220020601A1 - Status: Published application - Kind: A1 - Application number: 17/305,552 - Filed: 2021-07-09 - Published: 2022-01-20 - Earliest claimed: 2020-07-20 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Satoshi TODA; Naoki SHINDO; Haruna SUZUKI; Gen YOU - Web page: https://patentgrep.com/patent/US20220020601A1 ## CPC - H10P 50/266: {by vapour etching only} - H10P 50/269: {pre- or post-treatments, e.g. anti-corrosion processes} - H10P 72/0421: {for drying etching} - H10W 20/054: {by selectively removing parts thereof (H10W20/034 takes precedence)} - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - H10W 20/0595: {by using multiple deposition steps separated by etching steps} - H10W 20/065: {by making at least a portion of the conductive part non-conductive, e.g. by oxidation} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An etching method includes: providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film; performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF6 gas and a WF6 gas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying a reduction gas and a second gas selected the MoF6 gas and the WF6 gas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoF6 gas and the WF6 gas into the chamber. ## Claims ### Claim 1 An etching method comprising: providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film; performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF6 gas and a WF6 gas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying a reduction gas and a second gas selected the MoF6 gas and the WF6 gas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoF6 gas and the WF6 gas into the chamber. ### Claim 2 (depends on 1) The etching method of claim 1, wherein the substrate further includes a laminated portion, in which the first film and a second film are laminated, and a groove, which is formed in a laminating direction of the laminated portion, and wherein the first film is etched through the groove. ### Claim 3 (depends on 2) The etching method of claim 2, wherein the second film is a silicon-containing film. ### Claim 4 (depends on 3) The etching method of claim 3, further comprising: oxidizing a surface of the first film after the performing the first etching and before the filling. ### Claim 5 (depends on 4) The etching method of claim 4, wherein the first gas in the first etching, the second gas in the filling, and the third gas in the second etching are the same. ### Claim 6 (depends on 5) The etching method of claim 5, wherein a gas selected from a H2 gas, a SiH4 gas, and a NH3 gas is used as the reduction gas. ### Claim 7 (depends on 6) The etching method of claim 6, wherein a pressure in the chamber in the filling ranges from 133 to 13332 Pa. ### Claim 8 (depends on 7) The etching method of claim 7, wherein a temperature of the substrate in the filling ranges from 200 to 400 degrees C. ### Claim 9 (depends on 8) The etching method of claim 8, wherein, in the first etching and the second etching, a gas selected from an O2 gas, an O3 gas, a NO gas, and a N2O gas is used as the oxidation gas. ### Claim 10 (depends on 9) The etching method of claim 9, wherein the pressure in the chamber in the first etching and the second etching ranges from 133.3 to 13330 Pa. ### Claim 11 (depends on 10) The etching method of claim 10, wherein the temperature of the substrate in the first etching and the second etching ranges from 50 to 400 degrees C. ### Claim 12 (depends on 1) The etching method of claim 1, further comprising: oxidizing a surface of the first film after the performing the first etching and before the filling. ### Claim 13 (depends on 1) The etching method of claim 1, wherein the first gas in the first etching, the second gas in the filling, and the third gas in the second etching are the same. ### Claim 14 (depends on 1) The etching method of claim 1, wherein a gas selected from a H2 gas, a SiH4 gas, and a NH3 gas is used as the reduction gas. ### Claim 15 An etching method comprising: providing, in a chamber, a substrate including a laminated portion, in which a first film, which is selected from a molybdenum film or a tungsten film, and a second film are alternately laminated, and a groove, which is formed perpendicular to the laminated portion; forming a protective layer made of one of the molybdenum film and the tungsten film on a wall portion of the groove formed in the laminated portion by supplying a reduction gas and a first gas selected from a MoF6 gas and a WF6 gas into the chamber; and etching the first film of the laminated portion through the groove by supplying an oxidation gas and one of the MoF6 gas and the WF6 gas into the chamber. ### Claim 16 (depends on 15) The etching method of claim 15, wherein the second film is a silicon-containing film. ### Claim 17 (depends on 15) The etching method of claim 15, wherein the etching includes: performing a first etching on the first film by supplying the oxidation gas and a second gas selected from the MoF6 gas and the WF6 gas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying the reduction gas and a third gas selected from the MoF6 gas and the WF6 gas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a fourth gas selected from the MoF6 gas and the WF6 gas into the chamber. ### Claim 18 (depends on 15) The etching method of claim 15, wherein, in the forming the protective layer, a gas selected from a H2 gas, a SiH4 gas, and a NH3 gas is used as the reduction gas. ### Claim 19 (depends on 15) The etching method of claim 15, wherein, in the etching, a gas selected from an O2 gas, an O3 gas, a NO gas, and a N2O gas is used as the oxidation gas. ### Claim 20 (depends on 1) An etching apparatus comprising: a chamber configured to accommodate therein a substrate; a stage configured to place the substrate thereon in the chamber; a gas supplier configured to supply an oxidation gas, a reduction gas, and at least one gas selected from a MoF6 gas and a WF6 gas into the chamber; an exhauster configured to evacuate an inside of the chamber; a temperature controller configured to adjust a temperature of the substrate on the stage; and a controller, wherein the controller is configured to control the gas supplier, the exhauster, and the temperature controller such that the etching method of claim 1 is performed.