Etching processing apparatus, quartz member and plasma processing method
AssigneeTokyo Electron Limited
InventorsToshihiko KIKUCHI, Nobuyuki NAGAYAMA
Life of this patent
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Abstract
An etching processing apparatus includes a stage configured to receive a substrate, a chamber configured to contain the stage, and a plasma generator configured to generate plasma in the chamber. An annular quartz member is disposed in a space in which the plasma is generated. The annular quartz member includes a surface facing the space. A coating film covers the surface of the quartz member. The coating film is made of a material other than quartz, and has a thickness of 10 nm or more and less than 800 nm.
Claims20
An etching processing apparatus, comprising:
- a stage configured to receive a substrate;
- a chamber configured to contain the stage;
- a plasma generator configured to generate plasma in the chamber;
- an annular quartz member disposed in a space in which the plasma is generated, the annular quartz member including a surface facing the space;
- and
- a coating film covering the surface of the quartz member,
- wherein the coating film is made of a material other than quartz, and has a thickness of 10 nm or more and less than 800 nm.
An annular quartz member used for an etching processing apparatus including a stage configured to receive a substrate, a chamber configured to contain the stage, and a plasma generator configured to generate plasma in the chamber, the annular quartz member being disposed in a space in which the plasma is generated, the annular quartz member comprising:
- an annular base member made of quartz, the annular base member including a surface facing the space;
- and
- a coating film covering the surface of the annular base member,
- wherein the coating film is made of a material other than quartz, and has a thickness of 10 nm or more and less than 800 nm.
An etching processing method, comprising steps of:
- forming a coating film on an annular quartz member, the coating film having a thickness of 10 nm or more and less than 800;
- attaching the annular quartz member to an etching processing apparatus;
- removing part of the coating film on the annular quartz member by generating plasma in the etching processing apparatus;
- carrying a substrate into the etching processing apparatus;
- and
- etching the substrate.
Dependencies are inferred from the claim text.