Method of Manufacturing a Semiconductor Structure

A method for manufacturing a semiconductor structure, the semiconductor structure comprising a III-N semiconductor device in a first region (I) and a silicon semiconductor device in a second region (II), the method comprising:

• providing a monocrystalline silicon base layer comprising a first region (I) for manufacturing the III-N semiconductor device and a second region (II) for manufacturing the silicon semiconductor device;
• providing, on the monocrystalline silicon base layer, a mask layer, wherein the mask layer is interrupted in the first region (I) by a recess in the monocrystalline silicon base layer, wherein the mask layer comprises a 2D material;
• forming, selectively, a layer of gamma-Al2O3 at a bottom of the recess by a first growth process;
• forming, selectively on the layer of gamma-Al2O3, a III-N semiconductor device stack by a second growth process;
• and
• manufacturing, in the second region (II), and at least partially, a silicon semiconductor device.