Switchable delivery for semiconductor processing system

A method of semiconductor processing comprising:

• delivering a first deposition precursor through a first transmission line and a first delivery line to a processing chamber of a semiconductor processing system to form a first layer of material on a substrate;
• delivering a treatment precursor through a second transmission line and an exhaust line;
• and
• switching delivery of the treatment precursor from the exhaust line to a second delivery line fluidly coupled with the processing chamber.

A method of semiconductor processing comprising:

• delivering a silicon-containing precursor through a first transmission line and a first delivery line to a processing chamber of a semiconductor processing system to form a silicon-containing layer of material on a substrate;
• delivering an oxygen-containing precursor through a second transmission line and a second delivery line to the processing chamber of the semiconductor processing system to form an oxygen-containing layer of material on the substrate;
• and
• delivering a treatment precursor through a third transmission line and the first delivery line to the processing chamber of the semiconductor processing system, wherein the first transmission line and the third transmission line are coupled with the first delivery line through an input manifold, and wherein the third transmission line is switchably coupled with an exhaust line at the input manifold.