Plasma processing apparatus and plasma processing method
AssigneesTokyo Electron Limited, Tohoku University
InventorMasaki HIRAYAMA
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AssigneesTokyo Electron Limited, Tohoku University
InventorMasaki HIRAYAMA
Estimating the term…
In an example of an embodiment, a plasma processing apparatus includes a processing container, a stage, an upper electrode, an inlet, and a waveguide device. The stage is provided within the processing container. The upper electrode is provided above the stage, to interpose a space within the processing container. The inlet is configured to introduce high-frequency waves. The high-frequency waves are VHF waves or UHF waves. The inlet is provided at an end of the space in the lateral direction, and extends in a circumferential direction around a central axis of the processing container. The waveguide device is configured to supply high-frequency waves to the inlet. The waveguide device includes a resonator that provides a waveguide. The waveguide of the resonator extends in the circumferential direction around the central axis and extends in the direction in which the central axis extends to be connected to the inlet.
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A plasma processing apparatus comprising:
A plasma processing method for performing plasma processing on a substrate using a processing apparatus, the plasma processing method comprising:
Dependencies are inferred from the claim text.