Nonvolatile memory device and operating method of the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYumin KIM, Seyun KIM, Jinhong KIM, Soichiro MIZUSAKI, Youngjin CHO
Life of this patent
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Abstract
A nonvolatile memory device and an operating method thereof are provided. The nonvolatile memory device includes a memory cell array including first to third memory cells sequentially arranged in a vertical stack structure and a control logic configured to apply a first non-selection voltage to the first memory cell, apply a second non-selection voltage different from the first non-selection voltage to the third memory cell, apply a selection voltage to the second memory cell, and select the second memory cell as a selection memory cell.
Claims20
A nonvolatile memory device comprising:
- a memory cell array including a first memory cell, a second memory cell, and a third memory cell sequentially arranged in a vertical stack structure;
- a control logic configured to select the second memory cell as a selection memory cell by applying a first non-selection voltage to the first memory cell, applying a second non-selection voltage different from the first non-selection voltage to the third memory cell, and applying a selection voltage to the second memory cell;
- and
- a bit line connected to the memory cell array, the bit line configured to apply an operation voltage to the memory cell array.
An operating method of a nonvolatile memory device comprising a memory cell array including a first memory cell, a second memory cell, and a third memory cell sequentially arranged in a vertical stack structure, the operating method comprising:
- selecting the second memory cell as a selection memory cell by applying a first non-selection voltage to the first memory cell, applying a second non-selection voltage different from the first non-selection voltage to the third memory cell, and applying a selection voltage to the second memory cell;
- and
- applying an operation voltage to the memory cell array,
- the operation being a write operation, an erase operation, and or a read operation.
Dependencies are inferred from the claim text.