Memory device and operation method thereof
AssigneeSK hynix Inc.
InventorHyung Jin CHOI
Life of this patent
Estimating the term…
Abstract
A memory device and an operating method thereof are provided. The memory device includes a latch configured to sense a voltage or a current of a bit line coupled to a memory cell and store read data, a transmission circuit configured to output the read data stored in the latch through a page bus line in response to a transmission signal, a cache latch configured to receive the read data through the page bus line and temporarily store the read data, and a pump voltage output circuit coupled to the transmission circuit through a transmission line and configured to apply a second voltage greater than a first voltage after applying the first voltage to the transmission line for a set time.
Claims18
A memory device, comprising:
- a latch configured to sense a voltage or a current of a bit line coupled to a memory cell and store read data;
- a transmission circuit configured to output the read data stored in the latch through a page bus line in response to a transmission signal;
- a cache latch configured to receive the read data through the page bus line and temporarily store the read data;
- and
- a pump voltage output circuit coupled to the transmission circuit through a transmission line and configured to apply a second voltage greater than a first voltage after applying the first voltage to the transmission line for a set time.
A memory device, comprising:
- a switch transferring data on a first line to a second line in response to a transmission signal;
- and
- a pump voltage output circuit coupled to a gate of the switch and outputting the transmission signal to the gate,
- wherein the pump voltage output circuit is configured to:
- increase a potential of the gate to a first voltage before the data is transferred to the second line;
- and
- output the transmission signal of a second voltage greater than the first voltage to the gate when the data is transferred to the second line.
A method of operating a memory device, the method comprising:
- storing read data in a latch of a page buffer by reading a memory cell;
- precharging a gate of a transmission switch coupled between the latch and a cache latch by applying a first voltage to the gate;
- and
- turning on, when the gate is precharged, the transmission switch by applying a second voltage greater than the first voltage to the gate.
Dependencies are inferred from the claim text.