Magnetic memory device and method for fabricating the same

A magnetic memory device comprising:

• a pinned layer;
• a free layer;
• a tunnel barrier layer between the pinned layer and the free layer;
• a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and the first oxide layer including a first material including at least one of calcium (Ca), strontium (Sr), magnesium (Mg), hafnium (Hf), zirconium (Zr) and aluminum (Al), the first material having a first oxygen affinity;
• and
• a second oxide layer spaced apart from the free layer with the first oxide layer therebetween, the second oxide layer including a second material different from the first material, the second material having a second oxygen affinity that is less than the first oxygen affinity.

A magnetic memory device comprising:

• a pinned layer;
• a free layer;
• a tunnel barrier layer between the pinned layer and the free layer;
• a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, the first oxide layer including a first metal oxide having a first oxide decomposition potential;
• and
• a second oxide layer spaced apart from the free layer with the first oxide layer therebetween, the second oxide layer including a second metal oxide different from the first metal oxide, the second metal oxide having a second oxide decomposition potential that is less than the first oxide decomposition potential.