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US 2022/0019146 A1Published application
Film forming material for lithography, composition for film formation for lithography, underlayer film for lithography, and method for forming pattern
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsMasahiro YAMANE, Kouichi YAMADA, Junya HORIUCHI, Takashi MAKINOSHIMA, Masatoshi ECHIGO
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Abstract
The present invention provides a film forming material for lithography comprising a compound having: a group of formula (0A): and a group of formula (0B): wherein each R is independently selected from the group consisting of a hydrogen atom and an alkyl group having 1 to 4 carbon atoms, provided that at least one R is an alkyl group having 1 to 4 carbon atoms.
Claims29
A film forming material for lithography comprising a compound having:
- a group of formula (0A):
- and
- a group of formula (0B):
- wherein
- each R is independently selected from the group consisting of a hydrogen atom and an alkyl group having 1 to 4 carbon atoms, provided that at least one R is an alkyl group having 1 to 4 carbon atoms.
2 more elements
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Dependencies are inferred from the claim text.