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US 2022/0019098 A1Published application
Stressed silicon modulator
AssigneeIntel Corporation
InventorsMengyuan Huang, David Patel, Kejia Li, Wei Qian, Ansheng Liu
Life of this patent
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Abstract
An optical modulator includes a substrate, a first dielectric layer over the substrate, a rib waveguide including a PN junction on the first dielectric, a second dielectric layer over the rib waveguide and a stressor layer including a metal, where the first or the second dielectric is between the stressor layer and the PN junction.
Claims20
An optical modulator, comprising:
- a substrate;
- a first dielectric layer over the substrate;
- a rib waveguide comprising a PN junction on the first dielectric;
- a second dielectric layer over the rib waveguide;
- and
- a stressor layer comprising a metal, wherein the first or the second dielectric is between the stressor layer and the PN junction.
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A method to fabricate an optical modulator, the method comprising:
- etching a semiconductor material to form a rib waveguide and a slab on a dielectric above a substrate:
- performing a PN junction implant;
- depositing dielectric on the rib waveguide and on slab;
- depositing a conductive material on the dielectric and etching the conductive material to form a stressor structure;
- and
- forming metallization structures on a P region and on an N region of slab.
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A system comprising:
- an optical modulator, comprising:
- a substrate;
- a first dielectric layer over the substrate;
- a rib waveguide comprising a PN junction on the first dielectric;
- a second dielectric layer over the rib waveguide;
- and
- a stressor layer comprising a metal, wherein the first or the second dielectric is between the stressor layer and the PN junction;
- and
- a battery to power the system.
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Dependencies are inferred from the claim text.