Method and apparatus for detecting circuit defects
AssigneeSamsung Electronics Co., Ltd.
InventorsDonggyu MINN, Daehyun KANG, Yonghoon KIM, Jihoon KIM, Hyundo RYU, Jeeho PARK, Sunggi YANG, Youngchang YOON, Sehyug JEON
Life of this patent
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Abstract
The disclosure relates to an RFIC apparatus, and more particularly, to an RFIC circuit having a test circuit, a test apparatus, and a test method thereof. Further, the disclosure relates to a method for estimating or determining a DC gain using a test apparatus and an RF circuit in a DC/AC test stage, and detecting defects of the RF circuit based on the estimated or determined DC gain.
Claims16
A method for testing a radio frequency (RF) circuit of a test apparatus, the method comprising:
- generating a DC current of a test circuit and identifying a reference resistance by measuring a potential difference between a first end and a second end of a reference resistor;
- determining a first drain source current of a transistor circuit based on the reference resistance and a first drain voltage of the transistor circuit, being applied by the test circuit;
- determining a second drain source current of the transistor circuit based on the reference resistance and a second drain voltage of the transistor circuit, being applied by the test circuit;
- identifying a drain resistance based on the first drain voltage, the second drain voltage, the first drain source current, and the second drain source current;
- and
- performing a test of the RF circuit based on the drain resistance, the first drain source current, and a first threshold value.
A test apparatus for performing a test based on a DC voltage gain, the test apparatus comprising:
- an operation unit configured to perform an operation based on a voltage or current measured by a test circuit and an analog-to-digital converter (ADC) in an RF circuit;
- and
- a controller configured to:
- generate a DC current of the test circuit and identify a reference resistance by measuring a potential difference between a first end and a second end of a reference resistor,
- determine a first drain source current of a transistor circuit based on the reference resistance and a first drain voltage of the transistor circuit, being applied by the test circuit,
- determine a second drain source current of the transistor circuit based on the reference resistance and a second drain voltage of the transistor circuit, being applied by the test circuit,
- identify a drain resistance based on the first drain voltage, the second drain voltage, the first drain source current, and the second drain source current, and
- perform a test of the RF circuit based on the drain resistance, the first drain source current, and a first threshold value.
A radio frequency (RF) circuit for performing a test based on a DC voltage gain, the RF circuit comprising:
- a transistor circuit configured to transmit and receive signals;
- a test circuit configured to generate a DC current for the test and apply a drain voltage to the transistor circuit;
- and
- a register controller configured to:
- control the test circuit to generate a DC current to identify a reference resistance,
- control the test circuit to apply a first drain voltage to the transistor circuit to determine a first drain source current of the transistor circuit, and
- control the test circuit to apply a second drain voltage to the transistor circuit to determine a second drain source current of the transistor circuit,
- wherein the register controller is a controller configured to control an RF test apparatus to identify a drain resistance and detect defects by measuring a DC gain.
Dependencies are inferred from the claim text.