Method for manufacturing a single-grained semiconductor nanowire

A method of manufacturing a single-grained semiconductor nanowire, the method comprising:

• forming an amorphous channel material layer on a substrate;
• patterning the channel material layer to form a semiconductor nanowire extending in a lateral direction on the substrate;
• forming a cover layer covering the semiconductor nanowire on the substrate;
• patterning the cover layer and the nanowire to form a trench exposing a side section of an one end of the semiconductor nanowire;
• forming a catalyst material layer formed of nickel oxide material, in contact with the side section of the one end of the semiconductor nanowire;
• and
• performing metal induced crystallization (MIC) by heat treatment to crystallize the semiconductor nanowire in a length direction of the semiconductor nanowire from the side section of the one end of the semiconductor nanowire in contact with the catalyst material wherein the MIC induces crystal growth from the side section of the one end of the semiconductor nanowire along the length direction thereof, and forms a single crystal-grained nanowire of one single crystal grain grown in <111> direction.