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US 2022/0018035 A1Published application
Composition for cobalt plating comprising additive for void-free submicron feature filling
AssigneeBASF SE
InventorsSathana Katayaporn, Charlotte Emnet, Dieter Mayer, Nadine Engelhardt, Marco Arnold, Lucas Benjamin Henderson, Alexander Fluegel
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Abstract
Described herein is a composition including metal ions consisting essentially of cobalt ions, and a specific monomeric and polymeric suppressing agent including a carboxylic, sulfonic, sulfinic, phosphonic, or phosphinic acid functional groups which show a suppressing effect that is required for void-free bottom-up filling of nanometer-sized recessed features.
Claims20
A composition for cobalt electroplating comprising
- (a) metal ions consisting essentially of cobalt ions, and
- (b) a suppressing agent comprising the structure of formula S1
- [B]n[A]p (S1)
- or having the structure of formula S2
- or comprising the structure of formula S3a or S3b
- or having the structure of formula S4
- Ø-R1 (S4)
- and their salts,
- wherein
- R1 is selected from the group consisting of X1—CO—O—R11, X1—SO2—O—R11, X1—PR11O(OR11), X1—P(OR1)2, X1—PO(OR1)2, and X1—SO—O—R11;
- R2, R3, R4 are independently selected from the group consisting of R1 and (i) H, (ii) aryl, (iii) C1 to C10 alkyl (iv) arylalkyl, (v) alkylaryl, and (vi) —(O—C2H3R12)m—OH, with the proviso that if one of R2, R3 or R4 are selected from the group consisting of R1, the other groups R2, R3 or R4 are different from R1,
- Ø is a C6 to C14 carbocyclic or a C3 to C10 nitrogen or oxygen containing heterocyclic aryl group, which may be unsubstituted or substituted by up to three C1 to C12 alkyl groups or up to two OH, NH2 or NO2 groups,
- R31 is selected from the group consisting of R1, H, OR32 and R32,
- R32 is selected from the group consisting of (i) H and (ii) C1 to C6 alkyl,
- X1 is a divalent group selected from the group consisting of (i) a chemical bond (ii) aryl, (iii) C1 to C12 alkanediyl, which may be interrupted by one or more O atoms, (iv) an arylalkyl group —X12—X11—, (v) an alkylaryl group —X11—X12—, and (vi) —(O—C2H3R12)m—,
- X2 is (i) a chemical bond or (ii) methanediyl,
- R11 is selected from the group consisting of H and C1 to C4 alkyl,
- R12 is selected from the group consisting of H and C1 to C4 alkyl,
- X12 is a divalent aryl group,
- X11 is a divalent C1 to C15 alkanediyl group,
- A is a co-monomer selected from the group consisting of vinyl alcohol, which may optionally be (poly)ethyoxylated, acrylonitrile, styrene and acrylamide,
- B is selected from the group consisting of formula S1a
- n is an integer from 2 to 10 000,
- m is an integer from 2 to 50,
- o is an integer from 2 to 1 000, and
- p is 0 or an integer from 1 to 10 000,
- wherein the composition is essentially free of any dispersed particles, and
- wherein the composition is essentially free of any further suppressing agent.
25 more elements
A method of using a compound comprising the structural element of formula S1, S2, S3a, S3b or S4
- [B]n[A]p (S1)
- or having the structure of formula S2
- or comprising the structure of formula S3a or S3b
- or having the structure of formula S4
- Ø-R1 (S4)
- and their salts,
- the method comprising using the compound as a suppressing agent for void-free deposition of a metal comprising cobalt on a semiconductor substrate comprising recessed features having an aperture size below 100 nm,
- wherein
- R1 is selected from the group consisting of X1—CO—O—R11, X1—SO2—O—R11, X1—PR11O(OR11), X1—P(OR1)2, X1—PO(OR1)2, X1—SO—O—R11;
- R2, R3, R4 are independently selected from the group consisting of R1 and (i) H, (ii) aryl, (iii) C1 to C10 alkyl (iv) arylalkyl, (v) alkylaryl, and (vi) —(O—C2H3R12)m—OH, with the proviso that if one of R2, R3 or R4 are selected from the group consisting of R1, the other groups R2, R3 or R4 are different from R1
- Ø is a C6 to C14 carbocyclic or a C3 to C10 nitrogen or oxygen containing heterocyclic aryl group, which may be unsubstituted or substituted by up to three C1 to C12 alkyl groups or up to two OH, NH2 or NO2 groups,
- R31 is selected from the group consisting of R1, H, OR32 and R32,
- R32 is selected from the group consisting of (i) H and (ii) C1 to C6 alkyl,
- X1 is a divalent group selected from the group consisting of (i) a chemical bond (ii) aryl, (iii) C1 to C12 alkanediyl, which may be interrupted by O atoms, (iv) arylalkyl group —X11—X12—, (v) alkylaryl group —X12—X11—, and (vi) —(O—C2H3R12)mO—,
- X2 is (i) a chemical bond or (ii) methanediyl,
- R11 is selected from the group consisting of H and C1 to C4 alkyl,
- R12 is selected from the group consisting of H and C1 to C4 alkyl,
- X12 is a divalent aryl group,
- X11 is a divalent C1 to C15 alkanediyl group,
- A is a co-monomer selected from the group consisting of vinyl alcohol, which may optionally be (poly)ethyoxylated, acrylonitrile, styrene and acrylamide,
- B is selected from the group consisting of formula Sla
- n is an integer from 2 to 10 000,
- m is an integer from 2 to 50,
- o is an integer from 2 to 1 000, and
- p is 0 or an integer from 1 to 10 000.
22 more elements
Dependencies are inferred from the claim text.