High-strength zirconia-alumina composite ceramic substrate applied to semiconductor device and manufacturing method thereof

A method for manufacturing a high-strength zirconia-alumina composite ceramic substrate applied to a semiconductor devices, the manufacturing process includes:

• Ball milling step:
• Using alumina with a powder particle size (D50) of 0.7-0.3 μm, zirconia with a powder particle size (D50) of 0.20-0.80 μm, and pre-synthesized sintering additive with a powder size (D50) of 0.3˜1.5 μm as starting powders for ball milling mixing and dispersion in organic solvent at room temperature;
• Slurry preparing step:
• Preparing the alumina slurry mix with 1 to 15 wt. % of zirconia, 0.01 to 5.0 wt. % of sintering promotion additive and the rest of alumina;
• Degassing step:
• Degassing the slurry mix until the viscosity of the slurry mix reaches the pre-set range of 8000˜30000 cps;
• Green embryo forming step:
• The slurry mix with viscosity of 8000˜30000 cps is scraped to form a green embryo roll with a thickness of 0.12˜1.1 mm;
• Punching step:
• Punching the zirconia-aluminum composite green embryo roll;
• Calculation steps:
• Calculating the outer diameter of the green embryo based on the pre-tested sintering shrinkage rate to yield the punched green embryo with the size of 227×168 mm;
• Sintering step:
• Sintering said calculated green embryos with a size of 227×168 mm through a high-temperature furnace at a temperature of 1560˜1660° C. and heat them into the zirconia-alumina composite substrate with a size of 190.5×138 mm and a thickness of 0.1-0.9 mm.