Laser processing method

A laser processing method for processing a wafer with a laser beam using a laser processing apparatus, the laser processing apparatus including a holding unit for holding the workpiece thereon, a laser oscillator for emitting a pulsed laser beam, a polygon mirror for dispersing the pulsed laser beam emitted from the laser oscillator, a condenser for condensing the pulsed laser beam dispersed by the polygon mirror and applying the condensed pulsed laser beam to the workpiece held by the holding unit and dispersed region adjusting means for controlling a dispersed region of the pulsed laser beam, the laser processing method comprising:

• a holding step of holding the workpiece on the holding unit;
• and
• a processing step of processing the workpiece held by the holding unit by applying the pulsed laser beam
• wherein, in the processing step, the dispersed region adjusting means controls the dispersed region of the pulsed laser beam by causing the pulsed laser beam to follow a direction in which the mirror facets of the polygon mirror are rotated.