Light-emitting element, method for manufacturing light-emitting element

A method for manufacturing a light-emitting element, the method comprising:

• forming an anode on the substrate;
• forming a light-emitting layer above the anode, the light-emitting layer including a plurality of light-emitting regions respectively emitting light of different wavelengths;
• and
• forming an electron-transport layer above the light-emitting layer, the electron-transport layer including a plurality of regions each corresponding to one of the light-emitting regions, an electron-transport layer including a Zn1-XMgXO film (where X is 0≤X<1), and, of the plurality of regions included in the electron-transport layer, a region, corresponding to one of the light-emitting regions that emits light of a shorter wavelength, being higher in composition ratio X of Mg and less in thickness of the Zn1-XMgXO film, and the method further comprising forming a cathode above the electron-transport layer.

A light-emitting element, comprising:

• a cathode;
• an anode;
• a light-emitting layer formed between the cathode and the anode, and including a plurality of light-emitting regions respectively emitting light of different wavelengths;
• and
• an electron-transport layer formed between the cathode and the light-emitting layer, and including a plurality of regions each corresponding to one of the light-emitting regions, the electron-transport layer including a Zn1-XMgXO film (where X is 0≤X<1), and, of the plurality of regions included in the electron-transport layer, a region, corresponding to one of the light-emitting regions that emits light of a shorter wavelength, being higher in composition ratio X of Mg.

A light-emitting element, comprising:

• a cathode;
• an anode;
• a light-emitting layer formed between the cathode and the anode, and including a plurality of light-emitting regions respectively emitting light of different wavelengths;
• and
• an electron-transport layer formed between the cathode and the light-emitting layer, and including a plurality of regions each corresponding to one of the light-emitting regions, the electron-transport layer including a Zn1-XMgXO film (where X is 0≤X<1), and, of the plurality of regions included in the electron-transport layer, a region, corresponding to one of the light-emitting regions that emits light of a shorter wavelength, being less in thickness of the Zn1-XMgXO film.