A method for enhancing the performance of pentacene organic field-effect transistor and the structure of pentacence organic field-effect transistor

A structure configured to enhance performance of pentacene organic field-effect transistor (OFET) memory

• the structure of the OFET is the bottom-gate type:
• the structure from the bottom to the top is gate-electrode/insulating layer/polymer/pentacene/source (drain)-electrode;
• or the structure of the OFET also can be the top-gate type:
• the structure from the bottom to the top is source(drain)-electrode/pentacene/polymer/insulating layer/gate-electrode[[. Its characteristics are as followed:
• an n-type semiconductor thin film is set as a buffer layer between pentacene and polymer electret;
• the gate electrode is a conductor which resistivity is less than 0.005 Ω·cm, and the insulating layer is an insulator;
• the polymer is a charge-trapping dielectric, and selected from polystyrene, poly(2-vinyl naphthalene) (PVN) and poly(α-methylstyrene) (PαMS);
• the thickness of polymer layer is 1-100 nm;
• N-type semiconductor thin film is a buffer layer, which is an n-type inorganic semiconductor thin film or an n-type organic semiconductor thin film, and its thickness is 1-100 nm;
• the thickness of pentacene is 1-100 nm;
• The thickness of source(drain)-electrode is 50-200 nm.