Variable resistance memory device and method of manufacturing the same

A variable resistance memory device comprising:

• first conductive lines extending in a first direction;
• second conductive lines extending in a second direction and crossing the first conductive lines in a plan view;
• and
• cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view,
• wherein each of the cell structures comprises a switching pattern and a variable resistance pattern,
• wherein each of the first conductive lines includes first regions vertically overlapping the cell structures and second regions disposed between the first regions, and
• wherein a nitrogen concentration of upper portions of the first regions is higher than that of upper portions of the second regions.

A variable resistance memory device comprising:

• first conductive lines extending in a first direction;
• second conductive lines extending in a second direction and crossing the first conductive lines in a plan view;
• cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view;
• first filler structure s interposed between the first conductive lines;
• a second filler structure interposed between the cell structures;
• and
• third filler structures interposed between the second conductive lines,
• wherein each of the cell structures comprises:
• a first electrode;
• a switching pattern on the first electrode;
• a second electrode on the switching pattern;
• a variable resistance pattern on the second electrode;
• and
• a third electrode on the variable resistance pattern,
• wherein each of the first conductive lines comprises an upper pattern including a metal nitride in an upper portion thereof, and
• wherein the upper pattern is in contact with a bottom surface of the first electrode.