Low current rram-based crossbar array circuit implemented with switching oxide engineering technologies
AssigneeTetraMem Inc.
InventorsMinxian Zhang, Ning Ge
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Abstract
Switching oxide engineering technologies relating to low current RRAM-based crossbar array circuits are disclosed. An apparatus, in some implementations, includes: a substrate; a bottom electrode formed on the substrate; a switching oxide stack formed on the bottom electrode. The switching oxide stack includes one or more base oxide layers and one or more discontinuous oxide layers alternately stacked; An apparatus further includes a top electrode formed on the switching oxide stack. The base oxide layer includes TaOx, HfOx, TiOx, ZrOx, or a combination thereof. The discontinuous oxide layer includes Al2O3, SiO2, Si3N4, Y2O3, Gd2O3, Sm2O3, CeO2, Er2O3, or the combination thereof.
Claims13
An apparatus comprising:
- a substrate;
- a bottom electrode formed on the substrate;
- a switching oxide stack formed on the bottom electrode, wherein the switching oxide stack comprises one or more base oxide layers and one or more discontinuous oxide layers alternately stacked;
- and
- a top electrode formed on the switching oxide stack, wherein the base oxide layer comprises TaOx, HfOx, TiOx, ZrOx, or a combination thereof, and wherein the discontinuous oxide layer comprises Al2O3, SiO2, Si3N4, Y2O3, Gd2O3, Sm2O3, CeO2, Er2O3, or a combination thereof.
Dependencies are inferred from the claim text.