Method of forming multi-bit resistive random access memory cell

A method of forming a multi-bit resistive random access memory cell, comprising:

• sequentially forming a first dielectric layer, a first bottom electrode, a second dielectric layer, a second bottom electrode, a third dielectric layer, a third bottom electrode and a fourth dielectric layer on a layer;
• performing a first etching process to pattern the fourth dielectric layer, the third bottom electrode, the third dielectric layer, the second bottom electrode, the second dielectric layer, the first bottom electrode and the first dielectric layer to forma through hole in the first dielectric layer, the first bottom electrode, the second dielectric layer, the second bottom electrode, the third dielectric layer, the third bottom electrode and the fourth dielectric layer;
• and
• forming a resistance layer conformally covering a sidewall of the through hole and filling a top electrode in the through hole, thereby the multi-bit resistive random access memory cell being formed.