Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChia-Wei Liu, Jia-Feng Fang, Chun-Hsien Lin
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Abstract
A method for fabricating semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) stack on a substrate, performing an etching process to remove the MTJ stack for forming a MTJ, performing a deposition process to form a polymer on a sidewall of the MTJ, and removing the polymer to form a rough surface on the sidewall of the MTJ. Preferably, the MTJ could include a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer, in which the rough surface could appear on sidewall of the pinned layer, sidewall of the barrier layer, and/or sidewall of the free layer.
Claims18
A method for fabricating semiconductor device, comprising:
- forming a magnetic tunneling junction (MTJ) stack on a substrate;
- (a) performing an etching process to remove the MTJ stack for forming a MTJ;
- and
- (b) performing a deposition process to form a polymer on a sidewall of the MTJ.
A semiconductor device, comprising:
- a magnetic tunneling junction (MTJ) on a substrate, wherein a sidewall of the MTJ comprises a rough surface.
Dependencies are inferred from the claim text.