Transistor, semiconductor device including the same, and manufacturing method thereof

A semiconductor device, comprising:

• a semiconductor substrate;
• lower interconnection tiers, disposed on the semiconductor substrate;
• and
• an active device tier disposed on the lower interconnection tiers, wherein the active device tier includes a transistor, the transistor comprising:
• a channel strip of semiconductor material;
• a gate pattern extending over a first surface of the channel strip;
• monolayers disposed on a second surface of the channel strip and including a first compound;
• a source contact separated from the channel strip by a first monolayer of the monolayers;
• and
• a drain contact separated from the channel strip by a second monolayer of the monolayers;
• wherein the first compound is an organic compound including a polar group and a hydrophobic chain, wherein the polar group is bonded to the semiconductor material of the channel strip.

A manufacturing method of a semiconductor device, comprising:

• disposing a semiconductor oxide material over lower interconnection tiers to form a channel strip, wherein the lower interconnection tiers are stacked over each other on a semiconductor substrate;
• disposing a high-k dielectric material on the semiconductor oxide material to form a high-k dielectric strip;
• contacting at least two ends of the channel strip with an organic material, wherein the organic material includes a polar group which binds to the semiconductor oxide material;
• disposing a first metallic material on the organic material on the at least two ends of the channel strip to form a pair of source and drain contacts;
• and
• disposing a second metallic material on the high-k dielectric strip to form a gate pattern.