Achromatic devices with thermal radiation sources

A solid-state thermal radiation source coupled with a solid-state light-emitting device, wherein at least one single-die semiconductor light-emitting diode with a p-n junction is under a vacuum or exposed to a gaseous environment, further comprising a luminescent element in a separate second enclosure and within said second enclosure an environment that protects the luminescent element, wherein said environment comprises a vacuum or a partial vacuum substantially devoid of oxygen and wherein the second enclosure is at least one of permanence or replaceable;

• wherein the at least one single-die semiconductor light-emitting diode includes a first light-emitting diode element and a second light-emitting diode element;
• wherein the second light-emitting diode element has a spectral entropic maximum in the infrared, comprising a GaN, InGaN, AlGaN, or AlInGaN semiconductor, or a semiconductor comprising Ga, N, In or Al configured to emit a primary radiation which is the same for the at least one single-die LED present in the device, said primary radiation being a relatively shorter wavelength radiation;
• and
• comprising a collection or concentration luminophoric medium arranged in receiving relationship to said primary radiation and tertiary radiation, wherein the luminophoric medium responsively emits a secondary, relatively longer wavelength polychromatic radiation when the luminophoric medium is excited via exposure to the primary radiation and tertiary radiation, wherein separate wavelengths of said polychromatic radiation mix to produce an achromatic light output;
• and comprising a gaseous region that comprises a plurality of gases, whereas the at least one chamber is distinct and different from a polymeric or encapsulating matrix that forms an outer shape of the device.

A solid-state thermal radiation source coupled with a solid-state light-emitting device, wherein at least one single-die semiconductor light-emitting diode with a p-n junction is under a vacuum or exposed to a gaseous environment;

• wherein the at least one single-die semiconductor light-emitting diode includes a first light-emitting diode element and a second light-emitting diode element;
• wherein the second light-emitting diode element has a spectral entropic maximum in the mid-infrared region, comprising a doped silicon carbide semiconductor, or a semiconductor comprising Ga, N, In or Al on a silicon carbide substrate, configured to emit a primary radiation which is the same for the at least one single-die LED present in the device, said primary radiation being a relatively shorter wavelength radiation;
• and
• comprising a collection or concentration luminophoric medium arranged in receiving relationship to said primary radiation and tertiary radiation, wherein the luminophoric medium responsively emits a secondary, relatively longer wavelength polychromatic radiation when the luminophoric medium is excited via exposure to the primary radiation and tertiary radiation, wherein separate wavelengths of said polychromatic radiation mix to produce an achromatic light output;
• and comprising a gaseous region that comprises a plurality of gases, whereas the at least one chamber is distinct and different from a polymeric or encapsulating matrix that forms an outer shape of the device.

A solid-state thermal radiation source coupled with a solid-state light-emitting device, wherein at least one single-die semiconductor light-emitting diode with a p-n junction is under a vacuum or exposed to a gaseous environment, further comprising a luminescent element in a separate second enclosure and within said second enclosure an environment that protects the luminescent element, wherein said environment comprises a vacuum or a partial vacuum substantially devoid of oxygen and wherein the second enclosure is at least one of permanence or replaceable;

• wherein the at least one single-die semiconductor light-emitting diode includes a first light-emitting diode element and a second light-emitting diode element;
• wherein the second light-emitting diode element has a spectral entropic maximum in the mid-infrared, comprising a GaN, InGaN, AlGaN, or AlInGaN semiconductor, or a semiconductor comprising Ga, N, In or Al configured to emit a primary radiation which is the same for the at least one single-die LED present in the device, said primary radiation being a relatively shorter wavelength radiation;
• and
• comprising a collection or concentration luminophoric medium arranged in receiving relationship to said primary radiation and tertiary radiation, wherein the luminophoric medium responsively emits a secondary, relatively longer wavelength polychromatic radiation when the luminophoric medium is excited via exposure to the primary radiation and tertiary radiation, wherein separate wavelengths of said polychromatic radiation mix to produce an achromatic light output;
• and comprising a gaseous region that comprises a mixture of no less than 98% helium and no more than 2% deuterium or hydrogen, whereas the at least one chamber is distinct and different from a polymeric or encapsulating matrix that forms an outer shape of the device.