Method for Producing Optoelectronic Semiconductor Devices and Optoelectronic Semiconductor Device
AssigneeOSRAM Opto Semiconductors GmbH
InventorsPascal Porten, Mathias Kämpf, Marcus Zenger
Life of this patent
Estimating the term…
Abstract
In one embodiment, a method includes providing a chip carrier, creating holes for electrical through-connections in the chip carrier, producing a thin metallization in the holes, filling the metallized holes with a filling of a plastic, and applying optoelectronic semiconductor chips on the metallized holes so that the semiconductor chips are ohmically conductively connected with an associated metallization, wherein a mean thickness of the metallization in the holes is between 0.1 μm and 0.7 μm, inclusive, and wherein a diameter of the holes exceeds the mean thickness of the metallization by at least a factor of 10.
Claims19
-17. (canceled)
A method for producing optoelectronic semiconductor devices, the method comprising:
- providing a chip carrier,
- creating holes for electrical through-connections in the chip carrier,
- producing a thin metallization in the holes;
- filling the metallized holes with a filling of a plastic;
- and
- applying optoelectronic semiconductor chips on the metallized holes so that the semiconductor chips are ohmically conductively connected with an associated metallization,
- wherein a mean thickness of the metallization in the holes is between 0.1 μm and 0.7 μm, inclusive, and
- wherein a diameter of the holes exceeds the mean thickness of the metallization by at least a factor of 10.
The method according to claim i8, further comprising:
- removing the filling before applying the optoelectronic semiconductor chips.
A method for producing optoelectronic semiconductor devices, the method comprising:
- providing a chip carrier;
- creating holes for electrical through-connections in the chip carrier;
- generating a continuous electrical insulating layer which extends into the holes and completely covers a bottom surface of the holes;
- producing a thin metallization in the holes and applying the metallization directly to the electrical insulting layer;
- filling the metallized holes with a filling of a plastic;
- and
- applying optoelectronic semiconductor chips on the metallized holes so that the semiconductor chips are ohmically conductively connected with an associated metallization.
Dependencies are inferred from the claim text.