Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device

A method of manufacturing a semiconductor light-emitting device, comprising:

• forming an active layer made of an AlGaN-based semiconductor material on an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material;
• forming a p-type semiconductor layer on the active layer;
• removing the p-type semiconductor layer and the active layer in a region different from a first comb tooth region on the n-type semiconductor layer to expose an upper surface of the n-type semiconductor layer;
• forming an n-side contact electrode in a second comb tooth region on the n-type semiconductor layer inserted in the first comb tooth region;
• forming a p-side contact electrode in a third comb tooth region on the p-type semiconductor layer;
• forming a protective layer covering the p-side contact electrode and the n-side contact electrode and made of a dielectric material;
• forming a p-side pad opening in a fourth comb tooth region on the p-side contact electrode, the p-side pad opening extending through the protective layer;
• forming an n-side pad opening in a fifth comb tooth region on the n-side contact electrode, the n-side pad opening extending through the protective layer;
• forming a p-side pad electrode provided on the protective layer and connected to the p-side contact electrode in the p-side pad opening;
• and
• forming an n-side pad electrode provided on the protective layer and connected to the n-side contact electrode in the n-side pad opening.