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US 2022/0013675 A1Published application
Semiconductor material, infrared light receiving element and method for producing semiconductor material
AssigneesIbaraki University, JX Nippon Mining & Metals Corporation
InventorsHaruhiko UDONO, Toshiaki ASAHI
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Abstract
Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula: Mg2Sn.Zna Composition formula: in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.
Claims7
A semiconductor material, the semiconductor material having a single crystal represented by the following composition formula:
- Mg2Sn.Zna Composition formula:
- in which, a is a Zn content of from 0.05 to 1 at % relative to Mg2Sn.
Dependencies are inferred from the claim text.