Semiconductor device
AssigneeJapan Display Inc.
InventorsTatsuya TODA, Masashi TSUBUKU, Toshinari SASAKI
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.
Claims9
A semiconductor device comprising:
- an oxide semiconductor layer including indium;
- a gate electrode facing the oxide semiconductor layer;
- a gate insulating layer between the oxide semiconductor layer and the gate electrode;
- and
- a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer,
- wherein indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer, and
- the unevenly distributed region overlapping with the first conductive layer in a planar view.
Dependencies are inferred from the claim text.