Semiconductor devices and methods of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Ruei Jhan, Kuan-Ting Pan, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
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Abstract
A semiconductor device includes a first active fin structure and a second active fin structure extending along a first lateral direction. The semiconductor device includes a dummy fin structure, also extending along the first lateral direction, that is disposed between the first active fin structure and the second fin structure. The dummy fin structure includes a material that is configured to induce mechanical deformation of a first source/drain structure coupled to an end of the first active fin structure and a second source/drain structure coupled to an end of the second active fin structure.
Claims20
A semiconductor device, comprising:
- a first active fin structure and a second active fin structure extending along a first lateral direction;
- and
- a dummy fin structure, also extending along the first lateral direction, that is disposed between the first active fin structure and the second fin structure;
- wherein the dummy fin structure includes a material that is configured to induce mechanical deformation of a first source/drain structure coupled to an end of the first active fin structure and a second source/drain structure coupled to an end of the second active fin structure.
A semiconductor device, comprising:
- a first transistor configured in a first conduction type, comprising:
- a first active fin structure;
- and
- a first source/drain structure coupled to an end of the first active fin structure;
- a second transistor configured in a second conduction type different from the first conduction type, comprising:
- a second active fin structure;
- and
- a second source/drain structure coupled to an end of the second active fin structure;
- a first dummy fin structure disposed next to the first transistor;
- and
- a second dummy fin structure disposed next to the second transistor;
- wherein the first dummy fin structure includes a first material that is configured to cause a first type of deformation of the first source/drain structure, and the second dummy fin structure includes a dielectric material, different from the first dielectric material, that is configured to cause a second type of deformation of the second source/drain structure.
A method of fabricating a semiconductor device, comprising:
- forming a plurality of fin structures extending along a first lateral direction;
- forming a dummy fin structure disposed between two adjacent ones of the plurality of fin structures, wherein the dummy fin structure also extends along the first lateral direction and includes a deformable material;
- recessing respective end portions of each the plurality of fin structures;
- forming source/drain structures coupled to respective ends of each of the two adjacent fin structures;
- and
- deforming the deformable material of the dummy fin structure to apply either a tensile stress or a compressive stress on the source/drain structures coupled to each of the two adjacent fin structures.
Dependencies are inferred from the claim text.