Semiconductor device and manufacturing method of a semiconductor device
AssigneeSK hynix Inc.
InventorsIn Ku KANG, Sung Hyun YOON
Life of this patent
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Abstract
A semiconductor device includes a stack structure including conductive patterns spaced apart from each other, a channel structure penetrating the stack structure, and a slit insulating layer penetrating the stack structure. Air gaps are defined between the conductive patterns. The slit insulating layer includes a first interposition part covering a sidewall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side. A smallest width of the second interposition part is smaller than a smallest width of the first interposition part.
Claims17
A semiconductor device comprising:
- a stack structure including conductive patterns spaced apart from each other;
- a channel structure penetrating the stack structure;
- and
- a slit insulating layer penetrating the stack structure,
- wherein air gaps are defined between the conductive patterns,
- wherein the slit insulating layer includes a first interposition part covering a side, tall of one of the conductive patterns and a second interposition part covering one of the air gaps from the side, and
- wherein a smallest width of the second interposition part is smaller than a smallest width of the first interposition part.
A semiconductor device comprising:
- a stack structure including conductive patterns spaced apart from each other;
- a channel structure penetrating the stack structure;
- and
- a slit insulting layer penetrating the stack structure,
- wherein air gaps are defined between the conductive patterns,
- wherein the slit insulating layer includes a second sidewall defining an air gap adjacent to the second interposition part and a first sidewall facing the second sidewall, and
- wherein the first sidewall and the second sidewall are curved.
Dependencies are inferred from the claim text.