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US 2022/0013648 A1Published application
High voltage transistor structure and method of fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsZhi-Cheng Lee, Kai-Lin Lee, Wei-Jen Chen
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Abstract
A high voltage transistor structure includes a substrate. A metal gate is disposed on the substrate. At least one insulating material structure penetrates the metal gate. A metal compound layer is disposed between the metal gate and the substrate, between the insulating material structure and the substrate. The metal compound layer is a continuous structure. Agate dielectric layer is disposed under the metal compound layer and contacts the substrate.
Claims19
A high voltage transistor structure, comprising:
- a substrate;
- a metal gate disposed on the substrate;
- at least one insulating material structure penetrating the metal gate;
- a metal compound layer disposed between the metal gate and the substrate and between the insulating material structure and the substrate, wherein the metal compound layer is a first continuous structure;
- and
- a gate dielectric layer disposed under the metal compound layer and contacting the substrate.
3 more elements
A fabricating method of a high voltage transistor structure, comprising:
- providing a substrate;
- forming a gate dielectric layer, a metal compound layer and a dummy gate material layer in sequence to cover the substrate;
- patterning the dummy gate material layer to form a dummy gate and at least one hole which penetrates the dummy gate by taking the metal compound layer as a stop layer;
- forming an insulating material layer covering the dummy gate and the metal compound layer, and the insulating material layer filling in the hole, wherein the insulating material layer filling in the hole forms at least one insulating material structure;
- planarizing the insulating material layer to expose a top surface of the dummy gate;
- removing the dummy gate to form a trench;
- and
- forming a metal gate filling in the trench and the metal gate surrounding the insulating material structure.
5 more elements
Dependencies are inferred from the claim text.