US 2022/0013646 A1Published application

Semiconductor device

AssigneeRohm Co., Ltd.

InventorsKazuki KAWASAKI, Yuki INOUE, Yusuke YOSHII

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Abstract

The present disclosure provides a semiconductor device capable of reducing wiring resistance by using a stripe wire. The semiconductor device includes: a source pad electrode formed on a second interlayer insulating layer; a plurality of source extraction electrodes extracted in a first direction from the source pad electrode; a drain pad electrode formed on the second interlayer insulating layer; and a plurality of drain extraction electrodes extracted in the first direction from the drain pad electrode. The source pad electrode and the plurality of source extraction electrodes are electrically connected to a plurality of source wires of stripe wire covered by the second interlayer insulating layer. The drain pad electrode and the plurality of drain extraction electrodes are electrically connected to a plurality of drain wires of the stripe wire. The plurality of drain extraction electrodes are engaged with the plurality of source extraction electrodes.

Claims20

Dependent claims

A semiconductor device, comprising:

a first insulating layer;
a stripe wire, comprising a plurality of first wires and a plurality of second wires, each of the plurality of first wires and the plurality of second wires extending in a first direction on the first insulation layer and arranged at intervals in a second direction intersecting the first direction, wherein the stripe wire has a first end portion on one side of the first direction and a second end portion on the other side of the first direction;
a second insulating layer, covering the stripe wire on the first insulating layer;
a first pad electrode, arranged on the second insulating layer and on a side of the first end portion of the stripe wire, and electrically connected to the plurality of first wires;
a plurality of first extraction electrodes, extracted in a comb-like manner from the first pad electrode to a side of the second end portion of the stripe wire on the second insulating layer, electrically connected to the plurality of first wires on a side of the second end portion of the stripe wire relative to the first pad electrode;
a second pad electrode, arranged on the second insulating layer and on a side of the second end portion of the stripe wire, and electrically connected to the plurality of second wires;
and
a plurality of second extraction electrodes, extracted engagingly with the plurality of first extraction electrodes on the second insulating layer, in a comb-like manner from the second pad electrode to the side of the first end portion of the stripe wire, and electrically connected to the plurality of second wires on the side of the first end portion of the stripe wire relative to second pad electrode.

5 more elements

A semiconductor device, comprising:

a first insulating layer;
a stripe wire, comprising a plurality of first wires and a plurality of second wires, each of the plurality of first wires and the plurality of second wires extending in a first direction on the first insulation layer and arranged at intervals in a second direction intersecting the first direction, wherein the stripe wire has a first end portion on one side of the first direction and a second end portion on the other side in the first direction;
a second insulating layer, covering the stripe wire on the first insulating layer;
a first pad electrode, disposed on a side of the first end portion of the stripe wire on the second insulating layer, and electrically connected to the plurality of first wires;
a first extraction electrode, extracted in the first direction from the first pad electrode to a side of the second end portion of the stripe wire on the second insulating layer, opposite to the first pad electrode and electrically connected to the plurality of first wires on the side of the second end portion of the stripe wire;
a second pad electrode, disposed on the side of the second end portion of the stripe wire on the second insulating layer, and electrically connected to the plurality of second wires;
and
a second extraction electrode, extracted in the first direction from the second pad electrode to a side of the first end portion of the stripe wire on the second insulating layer, and electrically connected to the plurality of second wires on the side of the first end portion of the stripe wire relative to the second pad electrode,
wherein one of the first extraction electrode and the second extraction electrode comprises a protruding portion protruding in the second direction, and the other one of the first extraction electrode and the second extraction electrode comprises a recessed portion recessed toward one side of the second direction and engaged with the protruding portion.

6 more elements

A semiconductor device, comprising:

a first insulating layer;
a stripe wire, comprising a plurality of first wires and a plurality of second wires, each of the plurality of first wires and the plurality of second wires extending in a first direction on the first insulation layer and arranged at intervals in a second direction intersecting the first direction, wherein the stripe wire has a first end portion on one side of the first direction and a second end portion on one other side in the first direction;
a second insulating layer, covering the stripe wire on the first insulating layer;
a first pad electrode, disposed on a side of the first end portion of the stripe wire on the second insulating layer, and electrically connected to the plurality of first wires;
a first extraction electrode, extracted in the first direction from the first pad electrode to a side of the second end portion of the stripe wire on the second insulating layer, and electrically connected to the plurality of first wires on the side of the second end portion of the stripe wire relative to the first pad electrode;
a second pad electrode, disposed on the side of the second end portion of the stripe wire on the second insulating layer, and electrically connected to the plurality of second wires;
and
a second extraction electrode, extracted in the first direction from the second pad electrode to a side of the first end portion of the stripe wire on the second insulating layer, and electrically connected to the plurality of second wires on the side of the first end portion of the stripe wire relative to the second pad electrode,
wherein at least one of the first extraction electrode and the second extraction electrode comprises:
a first extension portion, extending in the first direction;
a third extension direction, extending in the first direction from the first extension portion to a side of the second end portion or away from a side of the first end portion;
and
a connection portion, connecting the first extension portion and the third extension portion.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/371,301Filed 9 Jul 2021
Priority: JP 2020-12008713 Jul 2020
Published: 13 Jan 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10D 30/65
Double-diffused metal-oxide semiconductor [DMOS] FETs: lateral dmos [ldmos] fets
H10D 64/251
Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes: source or drain…
H10D 30/655
Lateral dmos [ldmos] fets: having edge termination structures
H10D 62/127
Top-view geometrical layouts of the regions or the junctions: of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs