Semiconductor device and manufacturing method of semiconductor device

Abstract

Provided is a semiconductor device which includes a semiconductor substrate that has an upper surface and a lower surface. A hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction has a first hydrogen concentration peak and a second hydrogen concentration peak disposed closer to the lower surface side of the semiconductor substrate than the first hydrogen concentration peak. An intermediate donor concentration between the first hydrogen concentration peak and the second hydrogen concentration peak is different from any of an upper surface side donor concentration between the first hydrogen concentration peak and the upper surface of the semiconductor substrate and a lower surface side donor concentration between the second hydrogen concentration peak and the lower surface of the semiconductor substrate. The intermediate donor concentration may be higher than either the upper surface side donor concentration or the lower surface side donor concentration.

Dependencies are inferred from the claim text.