US 2022/0013639 A1Published application

Semiconductor device, inverter circuit, drive device, vehicle, and elevator

AssigneeKabushiki Kaisha Toshiba

InventorsKatsuhisa TANAKA, Ryosuke IIJIMA, Shinichi KIMOTO, Shinsuke HARADA

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Abstract

A semiconductor device of an embodiment includes a first trench extending in a first direction in a silicon carbide layer; a second trench and a third trench adjacent to each other in the first direction; a first silicon carbide region of n type; a second silicon carbide region of p type on the first silicon carbide region; a third silicon carbide region of n type on the second silicon carbide region; a fourth silicon carbide region of p type between the first silicon carbide region and the second trench; a fifth silicon carbide region of p type between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode, part of which is in the second trench, the first electrode contacting the first silicon carbide region between the fourth silicon carbide region and the fifth silicon carbide region; and a second electrode.

Claims20

Dependent claims

A semiconductor device, comprising:

a silicon carbide layer having a first face and a second face opposite to the first face, the first face being parallel to a first direction and a second direction orthogonal to the first direction, the silicon carbide layer including
a first trench located on a side of the first face and extending in the first direction,
a second trench located on a side of the first face and located in the second direction with respect to the first trench,
a third trench located on a side of the first face, the third trench located in the second direction with respect to the first trench, the third trench located in the first direction with respect to the second trench,
a first silicon carbide region of n type,
a second silicon carbide region of p type located between the first silicon carbide region and the first face,
a third silicon carbide region of n type located between the second silicon carbide region and the first face,
a fourth silicon carbide region of p type located between the first silicon carbide region and the second trench, and
a fifth silicon carbide region of p type located between the first silicon carbide region and the third trench, and the first silicon carbide region located between the fourth silicon carbide region and the fifth silicon carbide region;
a gate electrode located in the first trench;
a gate insulating layer located between the gate electrode and the silicon carbide layer;
a first electrode located on a side of the first face of the silicon carbide layer and including a first portion, a second portion, and a third portion, the first portion being in contact with the third silicon carbide region, the second portion being in contact with the first silicon carbide region located between the fourth silicon carbide region and the fifth silicon carbide region, and the third portion is located in the second trench;
and
a second electrode located on a side of the second face of the silicon carbide layer.

11 more elements

A semiconductor device, comprising:

a silicon carbide layer having a first face and a second face opposite to the first face, the first face being parallel to a first direction and a second direction orthogonal to the first direction, the silicon carbide layer including
a trench located on a side of the first face and extending in the first direction,
a first silicon carbide region of n type,
a second silicon carbide region of p type located between the first silicon carbide region and the first face,
a third silicon carbide region of n type located between the second silicon carbide region and the first face,
a fourth silicon carbide region of p type located in the second direction with respect to the trench, the first silicon carbide region located between the fourth silicon carbide region and the trench, and the fourth silicon carbide region being deeper than the trench, and
a fifth silicon carbide region of p type located in the first direction with respect to the fourth silicon carbide region, the first silicon carbide region located between the fifth silicon carbide region and the fourth silicon carbide region, and the fifth silicon carbide region being deeper than the trench;
a gate electrode located in the trench;
a gate insulating layer located between the gate electrode and the silicon carbide layer;
a first electrode located on a side of the first face of the silicon carbide layer, the first electrode including a first portion and a second portion, the first portion being in contact with the third silicon carbide region, and the second portion being in contact with the first silicon carbide region located between the fourth silicon carbide region and the fifth silicon carbide region;
and
a second electrode located on a side of the second face of the silicon carbide layer.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/191,900Filed 4 Mar 2021
Priority: JP 2020-1187569 Jul 2020
Published: 13 Jan 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification25 codes

H02M 7/003
Conversion of AC power input into DC power output; Conversion of DC power input into AC power output: constructional details, e.g. physical…
H10D 62/8325
Being Group IV materials comprising two or more elements, e.g. SiGe: silicon carbide
B60L 13/006
Electric propulsion for monorail vehicles, suspension vehicles or rack railways; Magnetic suspension or levitation for vehicles: electric…
B60L 50/51
Using propulsion power supplied by batteries or fuel cells: characterised by AC-motors