Semiconductor device, inverter circuit, drive device, vehicle, and elevator

A semiconductor device, comprising:

• a silicon carbide layer having a first face and a second face opposite to the first face, the first face being parallel to a first direction and a second direction orthogonal to the first direction, the silicon carbide layer including
• a first trench located on a side of the first face and extending in the first direction,
• a second trench located on a side of the first face and located in the second direction with respect to the first trench,
• a third trench located on a side of the first face, the third trench located in the second direction with respect to the first trench, the third trench located in the first direction with respect to the second trench,
• a first silicon carbide region of n type,
• a second silicon carbide region of p type located between the first silicon carbide region and the first face,
• a third silicon carbide region of n type located between the second silicon carbide region and the first face,
• a fourth silicon carbide region of p type located between the first silicon carbide region and the second trench,
• a fifth silicon carbide region of p type located between the first silicon carbide region and the third trench, and
• a sixth silicon carbide region of p type located between the second trench and the third trench, the sixth silicon carbide region having a depth smaller than a depth of the second trench, the sixth silicon carbide region having a p type impurity concentration higher than a p type impurity concentration of the second silicon carbide region;
• a gate electrode located in the first trench;
• a gate insulating layer located between the gate electrode and the silicon carbide layer;
• a first electrode located on a side of the first face of the silicon carbide layer, a part of the first electrode located in the second trench, the part of the first electrode being in contact with the fourth silicon carbide region on a bottom face of the second trench, the first electrode being in contact with the sixth silicon carbide region;
• and
• a second electrode located on a side of the second face of the silicon carbide layer, wherein
• a p type impurity concentration of a portion of the sixth silicon carbide region in contact with the first electrode is higher than a p type impurity concentration of a portion of the fourth silicon carbide region at the bottom face.